Defect evaluation using synchrotron radiation topography
Non-destructive defect evaluation of large-diameter wafers from 4 inches to 6 inches with high resolution is possible!
We would like to introduce our "Defect Evaluation using Synchrotron Topography." In compound semiconductors such as SiC and GaN, there are many crystal defects that significantly affect device characteristics. With this evaluation, it is possible to non-destructively assess defects across the entire surface of large-diameter wafers ranging from 4 inches to 6 inches with high resolution. 【Features】 ■ Visualization of various crystal defects with a resolution of a few micrometers ■ Detection of threading edge dislocations (TED) that cannot be detected by laboratory equipment ■ Evaluation of the types and distribution of defects *For more details, please download the PDF or feel free to contact us.
- Company：東芝ナノアナリシス
- Price：Other
